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张洪良

发布日期:2017-01-12     浏览次数:次   

教授、博士生导师
电子邮箱： kelvinzhang@xmu.edu.cn
办公室：化学楼581
实验室：化学楼589
课题组网页： https://khlzhang.xmu.edu.cn/  

个人简历：

教育经历

博士（英国牛津大学，2012）
硕士（新加坡国立大学，2008）
学士（山东大学，2003）

 

工作经历

2017-至今 厦门大学教授
2015- 2016 英国剑桥大学材料系Herchel Smith Fellow
2012-2014 美国西北太平洋国家实验室博士后       

 

研究兴趣：

1. 氧化镓、金刚石等第四代半导体外延生长、电学调控、缺陷机制及器件应用研究

2. 宽禁带半导体表界面电子结构及芯片界面散热机制研究

3. 过渡金属氧化物表界面化学及光电催化与磁性构效关系研究

团队面向宽禁带半导体产业技术需求，形成了从半导体薄膜外延生长、结构表征、表界面调控到机理机制解析的系统研究体系。依托学校学院多个国家级公共平台，拥有先进的半导体薄膜沉积设备，可实现原子级精度的高质量单晶薄膜制备，以及微纳加工、表征设备。在机理研究方面，团队擅长利用同步辐射光电子能谱、吸收谱及理论计算等先进手段，系统揭示固体表界面电子结构及其与宏观性能之间的内在关联机制。

近年来，在Nat. Electronics, Phys. Rev. Lett., Nat. Commun., Adv.Mater.等学术期刊发表论文200余篇，申请发明专利30余项，出版学术专著1部。主持国家重点研发计划课题、国家自然科学基金、中德合作交流项目及企业合作项目等项目15项。曾获国家高层次青年人才、福建省百人计划、剑桥大学 Herchel Smith ResearchFellowship、台湾积体电路制造公司（TMSC）最佳国际研究生科研奖。

近期主要代表论著：

  1. 1. Jueli Shi, Jiaye Zhang, Lu Yang, Mei Qu, Dong-Chen Qi, Kelvin H. L. Zhang*. Wide bandgap oxide semiconductors: from materials physics to optoelectronic devices. Adv. Mater., 2021, 33: 2006230.

  2. 2. Yue Yu, Xu Zhang, Wenjing Xu, Rongkun Chen, Cien Liu, Yiru Zhao, Yushuo Hu, Zhilai Fang, Ning Jia*, Xiangyu Xu*, Kelvin H. L. Zhang*. Epitaxial Growth of Degenerately Doped Ga2O3 Films on GaN (0001) as a Deep Ultraviolet Transparent Electrode for Opto‐Electronics Applications. Adv. Optical Mater., 2026, 14 (7): e03337.

  3. 3. Wenjing Xu, Yihong Chen, Xiaoqing Zhou, Xiangyu Xu, Xin Dong, Hao Long, Zhilai Fang, Zhenni Yang, Duanyang Chen, Hongji Qi, Kelvin H. L. Zhang*. Recent advancement and perspective of epitaxial growth and doping of β-Ga2O3 thin films for power electronics. APL Mater., 2025, 13 (10): 100601.

  4. 4. Jiaye Zhang, Joe Willis, Zhenni Yang, Ziqian Sheng, Lai-Sen Wang, Tien-Lin Lee, Lang Chen, David O. Scanlon*, Kelvin H. L. Zhang*. Direct determination of band-gap renormalization in degenerately doped ultrawide band gap β-semiconductor. Phys. Rev. B, 2022, 106 (20): 205305.

  5. 5. Siliang Kuang, Zhenni Yang, Ziqi Zhang, Ziqian Sheng, Shenglong Wei, Yihong Chen, Wenjing Xu, Ye Yang, Duanyang Chen*, Hongji Qi*, Kelvin H. L. Zhang*. Transport and electronic structure properties of MBE grown Sn doped Ga2O3 homo-epitaxial films. Mater. Today Phys., 2024, 48: 101555.

  6. 6. Jiaye Zhang, Zhenni Yang, Siliang Kuang, Ziqi Zhang, Shenglong Wei, Joe Wilis, Tien-Lin Lee, Piero Mazzolini, Oliver Bierwagen, Shanquan Chen, Zuhuang Chen, Duanyang Chen, Hongji Qi*, David Scanlon*, Kelvin H. L.Zhang*. Electronic structure and surface band bending of Sn doped Ga2O3 by hard X-ray photoemission spectra and ab initio calculations. Phys. Rev. B, 2024, 110 (11): 115120.

  7. 7. Xingyu Ding, Da Liu, Aoao wang, Peipei Zhang, Freddy E. Oropeza*, Pengju Zhao, Giulio Gorni, Mariam Barawi, Victor de la Peña O'Shea, Renbing Wu*, Kelvin H. L. Zhang*. In situ reconstruction of nickel selenide for enhanced hydrogen evolution reaction. Adv. Funct. Mater., 2025, 36 (13): e21566.

  8. 8. Xingyu Ding, Da Liu, Pengju Zhao, Xing Chen, Hongxia Wang, Freddy E. Oropeza*, Giulio Gorni, Mariam Barawi, Miguel García-Tecedor, Víctor A. de la Peña O’Shea, Jan P. Hofmann, Jianfeng Li, Jongkyoung Kim, Seungho Cho, Renbing Wu*, Kelvin H. L. Zhang*. Dynamic restructuring of nickel sulfides for electrocatalytic hydrogen evolution reaction. Nat. Commun., 2024, 15 (1): 5336.

  9. 9. Dong Li, Hongguang Wang*, Kaifeng Li, Bonan Zhu*, Kai Jiang*, Dirk Backes, Larissa S. I. Veiga, Jueli Shi, Pinku Roy, Ming Xiao, Aiping Chen, Quanxi Jia, Tien-Lin Lee, Sarnjeet S. Dhesi, David O. Scanlon, Judith L. MacManus-Driscoll, Peter A. van Aken, Kelvin H. L. Zhang*, Weiwei Li*. Emergent and robust ferromagnetic-insulating state in highly strained ferroelastic LaCoO3 thin films. Nat. Commun., 2023, 14 (1): 3638.

  10. 10. Yan Sun, Cheng-Rong Wu, Tian-Yi Ding, Jian Gu, Jia-Wei Yan*, Jun Cheng*, Kelvin H. L. Zhang*. Direct observation of the dynamic reconstructed active phase of perovskite LaNiO3 for the oxygen-evolution reaction. Chem. Sci., 2023, 14 (22): 5906-5911.

  11. 11. HU Yushuo, YANG Guojian, CAO Guangyu, LIU Cien, ZHANG Xing, LONG Hao*, XU Xiangyu*, ZHANG Hongliang*. Growth and Electrical Properties of High-Mobility Boron-Doped Single Crystal Diamond via Microwave Plasma Chemical Vapor Deposition. J. Synth. Cryst., 2025, 54 (9): 1566-1573.

  12. 12. Yushuo Hu, Cien Liu, Guangyu Cao, Xing Zhang, Yihong Chen, Hongwei Dai, Xiyao He, Hao Long, Shengwang Yu, Xiangyu Xu, Kelvin H. L. Zhang*. MPCVD grown high quality diamond single crystal film for high-speed solar-blind UV photodetectors with TiC ohmic contacts. Diamond Relat. Mater., 2025, 154: 112199.

  13. 13. Vedaste Uwihoreye, Yushuo Hu, Guangyu Cao, Xing Zhang, Freddy E. Oropeza, Kelvin H. L. Zhang*. Recent progress on heteroepitaxial growth of single crystal diamond films. Electron, 2024, 2 (4): e70.

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